MRF21010LR1 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
MRF21010LR1 Key Features
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 3