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MRF21010LSR1 - RF Power Field Effect Transistors

Download the MRF21010LSR1 datasheet PDF. This datasheet also covers the MRF21010LR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21010LR1-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Motorola
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Motorola
MRF21030LR3 RF Power Field Effect Transistors Motorola
MRF21030LSR3 RF Power Field Effect Transistors Motorola
MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21010LR1 RF Power Field Effect Transistors
MRF21120R6 RF Power Field Effect Transistor
MRF21125R3 RF Power Field Effect Transistors
MRF21125SR3 RF Power Field Effect Transistors
MRF284LR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.