Datasheet Summary
Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
- PCS/cellular radio and WLL applications.
- W
- CDMA Performance @
- 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power
- 14 Watts (Avg.) Power Gain
- 11.5 dB Efficiency
- 16%
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW Output Power
Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for...