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MRF21120 - RF POWER FIELD EFFECT TRANSISTOR

Key Features

  • 60 40 20 0 -20 -40 -60 η,.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21120/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power — 14 Watts (Avg.) Power Gain — 11.