MRF21120 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MRF21120 |
|---|---|
| Datasheet | MRF21120-Motorola.pdf |
| File Size | 385.00 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF POWER FIELD EFFECT TRANSISTOR |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21120/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for W CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN PCS/cellular radio and WLL applications.
View MRF21120R6 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MRF21120R6 | RF Power Field Effect Transistor | Freescale Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF21125 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125S | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21180R6 | RF Power Field Effect Transistor |
| MRF21010LR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21010LSR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030LR3 | RF Power Field Effect Transistors |
| MRF21030LSR3 | RF Power Field Effect Transistors |
| MRF21030R3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21030SR3 | RF POWER FIELD EFFECT TRANSISTORS |
