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MRF21125SR3 - RF Power Field Effect Transistors

Download the MRF21125SR3 datasheet PDF. This datasheet also covers the MRF21125R3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21125R3-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 1600 mA, Carrier W - CDMA f1 = 2112.5 MHz, fP2e=rf2o1rm22a.n5cMe Hfozr,VCDhDa=nn2e8l bVaonltds,wIiDdQth== 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.