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MRF21125R3 - RF Power Field Effect Transistors

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21125SR3 RF Power Field Effect Transistors
MRF21120R6 RF Power Field Effect Transistor
MRF21010LR1 RF Power Field Effect Transistors
MRF21010LSR1 RF Power Field Effect Transistors
MRF284LR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 1600 mA, Carrier W - CDMA f1 = 2112.5 MHz, fP2e=rf2o1rm22a.n5cMe Hfozr,VCDhDa=nn2e8l bVaonltds,wIiDdQth== 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.