MRF377HR3 Overview
LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field--Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, mon source amplifier applications in 32 volt digital...
MRF377HR3 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Device Designed for Push--Pull Operation Only
- Integrated ESD Protection
- Excellent Thermal Stability
- Lower Thermal Resistance Package
- Low Gold Plating Thickness on Leads, 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- 0.5, +65