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MRF377HR5 Datasheet Rf Power Field-effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: .. Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Drain Efficiency ≥ 21% ACPR ≤ - 58 dBc • Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2000 mA Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Drain Efficiency ≥ 27.5% IMD ≤ - 31.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Device Designed for Push - Pull Operation Only.
  • Integrated ESD Protection.
  • Excellent Thermal Stability.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 in.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
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MRF1570NT1 RF Power Field Effect Transistors
MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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