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MRF377HR5 - RF Power Field-Effect Transistors

Download the MRF377HR5 datasheet PDF. This datasheet also covers the MRF377HR3 variant, as both devices belong to the same rf power field-effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Ferrite Beads, Surface Mount, 11 Ω (0805) 0.8 - 1GHz Xinger Balun 33 pF Chip Capacitor (0805) 2.7 pF Chip Capacitor (0603) 12 pF Chip Capacitor (0805) 6.8 pF Chip Capacitors (0805) 2.7 pF Chip Capacitor (0805) 3.3 pF Chip Capacitors (0805) 2.2 μF, 50 V Chip Capacitors 0.01 μF, 100 V Chip Capacitors

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Device Designed for Push - Pull Operation Only.
  • Integrated ESD Protection.
  • Excellent Thermal Stability.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 in.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF377HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF377 RF POWER FIELD EFFECT TRANSISTOR Motorola
MRF377 RF Power Field-Effect Transistor NXP
MRF377R3 RF POWER FIELD EFFECT TRANSISTOR Motorola
MRF377R3 RF Power Field-Effect Transistor NXP
MRF377R5 RF POWER FIELD EFFECT TRANSISTOR Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF377HR3 RF Power Field-Effect Transistors
MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
MRF1517NT1 RF Power Field Effect Transistor
MRF1550FNT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF1550NT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Drain Efficiency ≥ 21% ACPR ≤ - 58 dBc • Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts, IDQ = 2000 mA Output Power — 80 Watts Avg. Power Gain ≥ 16.