MRF377HR5 Overview
Freescale Semiconductor Technical Data Document Number: 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon source amplifier applications in 32 volt digital television transmitter...
MRF377HR5 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Device Designed for Push
- Pull Operation Only
- Integrated ESD Protection
- Excellent Thermal Stability
- Lower Thermal Resistance Package
- Low Gold Plating Thickness on Leads, 40μ″ Nominal
- RoHS pliant