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MRF5S21130HSR3 Datasheet

Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF5S21130HSR3 Overview

Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.

MRF5S21130HSR3 Key Features

  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Lower Thermal Resistance Package
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal
  • RoHS pliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
  • 2170 MHz, 28 W AVG., 28 V 2 x W

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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MRF5S21130HR3 RF Power Field Effect Transistors
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MRF5S21045MR1 RF Power Field Effect Transistors
MRF5S21045NBR1 RF Power Field Effect Transistors
MRF5S21045NR1 RF Power Field Effect Transistors
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MRF5S21130HSR3 Distributor