MRF5S21130HR3 - RF Power Field Effect Transistors

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MRF5S21130HR3
Manufacturer	Freescale Semiconductor
File Size	421.96 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S21130HR3 Datasheet
Additional preview pages of the MRF5S21130HR3 datasheet.

Product details

Description

10 μF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 μF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Part Number 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 Manufac

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21130HR3 MRF5S21130HSR3 2110 - 2170 MHz, 28 W AVG. , 28 V 2 x W - CDMA.

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Published: Oct 18, 2008 |