MRF5S21150HSR3 - RF Power Field Effect Transistors

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MRF5S21150HSR3
Manufacturer	Freescale Semiconductor
File Size	408.51 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S21150HSR3 Datasheet
Note	This datasheet PDF includes multiple part numbers: MRF5S21150HSR3, MRF5S21150HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF5S21150HSR3 datasheet.

Product details

Description

22 μF, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 μF, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Part Number TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21150HR3 MRF5S21150HSR3 2110 - 2170 MHz, 33 W AVG. , 28 V 2 x W - CDMA.

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Other Datasheets by Freescale Semiconductor

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Published: Feb 15, 2007 |