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MRF5S21150HSR3 Datasheet

Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF5S21150HSR3 Overview

Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.

MRF5S21150HSR3 Key Features

  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Lower Thermal Resistance Package
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal
  • RoHS pliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
  • 2170 MHz, 33 W AVG., 28 V 2 x W

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S21150HR3 RF Power Field Effect Transistors
MRF5S21130HR3 RF Power Field Effect Transistors
MRF5S21130HSR3 RF Power Field Effect Transistors
MRF5S21045 RF Power Field Effect Transistors
MRF5S21045MBR1 RF Power Field Effect Transistors
MRF5S21045MR1 RF Power Field Effect Transistors
MRF5S21045NBR1 RF Power Field Effect Transistors
MRF5S21045NR1 RF Power Field Effect Transistors
MRF5S21090HR3 RF Power Field Effect Transistors
MRF5S21090HSR3 RF Power Field Effect Transistors

MRF5S21150HSR3 Distributor