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MRF5S21150HR3 - RF Power Field Effect Transistors

General Description

22 μF, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 μF, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Part Number TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21150HR3 MRF5S21150HSR3 2110 - 2170 MHz, 33 W AVG. , 28 V 2 x W - CDMA.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 33 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 12.5 dB Efficiency — 25% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc in 3.