MRF5S21150HR3 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Lower Thermal Resistance Package - Low Gold Plating Thickness on Leads, 40μ″ Nominal. - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21150HR3 MRF5S21150HSR3 - 2170 MHz, 33 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S21150HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S21150HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS PD Tstg TC TJ CW Value - 0.5, +65 - 0.5, +15 380 2.2 - 65 to +150 150 200 150 0.84 Unit Vdc Vdc W W/°C °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 33 W CW Symbol RθJC Value (1,2) 0.46 0.47 Unit °C/W 1. MTTF calculator available at http://.freescale./rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S21150HR3 MRF5S21150HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc)...