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MRF5S9100NR1 - SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

General Description

Ferrite Bead, Surface Mount 18 pF Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 0.8 - 8.0 pF Variable Capacitors, Gigatrim 6.2 pF Chip Capacitor 12 pF Chip Capacitors 11 pF Chip Capacitors 5.1 pF Chip Capacitors 470 mF, 63 V Electrolytic Capacitor 22 mF, 50 V Tantalum Capacitors 0.56 mF,

Key Features

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  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9100NR1 MRF5S9100NBR1 880 MHz, 20 W AVG. , 26 V SINGLE N - CDMA LATER.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S9100NBR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9101NBR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9101NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9150HSR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB Drain Efficiency — 28% ACPR @ 750 kHz Offset — - 46.