MRF7S16150HR3 Overview
Freescale Semiconductor Technical Data Document Number: 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
MRF7S16150HR3 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C Operation
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- CHANNEL RF POWER MOSFETs
- 06, STYLE 1 NI