MRF7S16150HR3 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. - Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain - 19.7 dB Drain Efficiency - 25.4% Device Output Signal PAR - 8.2 dB @ 0.01% Probability on CCDF ACPR @...