MRF7S16150HSR3

MRF7S16150HSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.

MRF7S16150HSR3 Datasheet

Part number	MRF7S16150HSR3
Download	MRF7S16150HSR3 Datasheet (PDF)
File Size	491.15 KB
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors

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MRF7S16150HSR3 Distributor

MRF7S16150HSR3 Description

Freescale Semiconductor Technical Data Document Number: 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

MRF7S16150HSR3 Key Features

Characterized with Series Equivalent Large
Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate
Source Voltage Range for Improved Class C Operation
RoHS pliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
CHANNEL RF POWER MOSFETs
06, STYLE 1 NI

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