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MRF8HP21130HR3 - RF Power Field Effect Transistors

General Description

10 μF Chip Capacitors 15 pF Chip Capacitors 1.2 pF Chip Capacitor 0.5 pF Chip Capacitor 0.7 pF Chip Capacitor 1 pF Chip Capacitor 220 μF, 50 V Electrolytic Capacitors 100 Ω, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistors 2000--2300 MHz Band 90°, 3 dB Hybrid Coupler 0.020″, εr = 3.5 Part Number GRM5

Key Features

  • Advanced High Performance In--Package Doherty.
  • Production Tested in a Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8HP21130HSR3 RF Power Field Effect Transistors
MRF8P20160HSR3 RF Power Field Effect Transistor
MRF8P23080HR3 RF Power Field Effect Transistors
MRF8P23080HSR3 RF Power Field Effect Transistors
MRF8P23160WHR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.2 14.1 14.0 ηD (%) 46.4 45.7 45.1 Output PAR (dB) 7.9 7.7 7.6 ACPR (dBc) --35.4 --35.3 --34.8 MRF8HP21130HR3 MRF8HP21130HSR3 2110-2170 MHz, 28 W AVG.