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MRF8HP21130HR3 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 14.2 14.1 14.0 ηD (%) 46.4 45.7 45.1 Output PAR (dB) 7.9 7.7 7.6 ACPR (dBc) --35.4 --35.3 --34.8 MRF8HP21130HR3 MRF8HP21130HSR3 2110-2170 MHz, 28 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) ..

Key Features

  • Advanced High Performance In--Package Doherty.
  • Production Tested in a Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction.

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