MRF8HP21130HSR3 Overview
Freescale Semiconductor Technical Data Document Number: 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8HP21130HSR3 Key Features
- Advanced High Performance In--Package Doherty
- Production Tested in a Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large--Signal Load--Pull Parameters and mon Source S--Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS pliant
- NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p.