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MRF8S9100HR3 - RF Power Field Effect Transistors

General Description

Part Number 2743019447 ATC100B470JT500XT ATC100B5R6BT500XT ATC100B7R5BT500XT ATC100B9R1BT500XT T491D106K035AT ATC100B130BT500XT ATC100B2R7BT500XT ATC100B6R2BT500XT ATC100B1R8BT500XT ATC100B200JT500XT C1825C564J5RAC - TU MCGPR63V477M13X26 - RH A04TJLC CRCW12060000Z0EA AD255A - 0300 - 55 - 11 Manufact

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant www. DataSheet4U. com.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage St.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S9100HSR3 RF Power Field Effect Transistors
MRF8S9102NR3 RF Power Field Effect Transistor
MRF8S9170NR3 RF Power Field Effect Transistor
MRF8S9200NR3 RF Power Field Effect Transistor
MRF8S9220HR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (%) 51.6 52.9 54.