Datasheet4U Logo Datasheet4U.com

MRF8S9100HSR3 - RF Power Field Effect Transistors

Download the MRF8S9100HSR3 datasheet PDF. This datasheet also covers the MRF8S9100HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number 2743019447 ATC100B470JT500XT ATC100B5R6BT500XT ATC100B7R5BT500XT ATC100B9R1BT500XT T491D106K035AT ATC100B130BT500XT ATC100B2R7BT500XT ATC100B6R2BT500XT ATC100B1R8BT500XT ATC100B200JT500XT C1825C564J5RAC - TU MCGPR63V477M13X26 - RH A04TJLC CRCW12060000Z0EA AD255A - 0300 - 55 - 11 Manufact

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant www. DataSheet4U. com.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage St.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8S9100HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S9200NR3 RF Power Field Effect Transistor NXP
MRF8S21140HR3 RF Power Field Effect Transistors NXP
MRF8S21140HSR3 RF Power Field Effect Transistors NXP
MRF8S26060HR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26060HSR3 RF Power Field Effect Transistors Motorola Semiconductor

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S9100HR3 RF Power Field Effect Transistors
MRF8S9102NR3 RF Power Field Effect Transistor
MRF8S9170NR3 RF Power Field Effect Transistor
MRF8S9200NR3 RF Power Field Effect Transistor
MRF8S9220HR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (%) 51.6 52.9 54.