| Part number | MRFG35010 |
|---|---|
| Datasheet | MRFG35010_FreescaleSemiconductor.pdf |
| File Size | 275.13 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
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Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MRFG35010MT1 | RF Power Field Effect Transistor | Motorola |
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35010ANT1 | RF Power Field Effect Transistor |
| MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Power Field Effect Transistors |
| MRFG35003N6T1 | RF Power Field Effect Transistor |
| MRFG35003NT1 | RF Power Field Effect Transistors |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35020AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
