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MRFG35010 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Key Features

  • 0 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 S11 |S11| 0.936 0.936 0.935 0.935 0.935 0.934 0.934 0.933 0.933 0.933 0.929 0.930 0.927 0.926 0.925 0.923 0.921 0.920 0.918 0.916 0.916 0.913 0.912 0.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 1 Watt Power Gain — 10 dB Efficiency — 30% • 10 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity MRFG35010 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT CASE 360D−02, STYLE 1 NI−360HF Table 1.