| Part number | MRFG35010MT1 |
|---|---|
| Datasheet | MRFG35010MT1_Motorola.pdf |
| File Size | 327.09 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistor |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35003M6T1 | RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Power Field Effect Transistor |
| MRF10005 | MICROWAVE POWER TRANSISTOR |
| MRF1002 | MICROWAVE POWER TRANSISTOR |
| MRF10031 | MICROWAVE POWER TRANSISTOR |
| MRF10070 | MICROWAVE POWER TRANSISTOR |
| MRF10120 | MICROWAVE POWER TRANSISTORS |
| MRF10150 | MICROWAVE POWER TRANSISTORS |
| MRF1015Mx | MICROWAVE POWER TRANSISTORS |
| MRF1030 | UHF POWER TRANSISTOR |
