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MRFG35010ANT1 - RF Power Field Effect Transistor

Description

0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.5 pF Chip Capacitor 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K pF Chip Capacitors 10 μF, 50 V Chip Capacitors 50 Ω Chip Resistor Part Number 08051J0R5BBT

Features

  • .796 0.797 0.796 0.796 0.796 0.796 0.794 S22 ∠φ - 179.31 179.94 179.35 178.72 178.05 177.37 176.66 175.92 175.15 174.36 173.56 172.68 171.84 171.00 170.10 169.21 168.37 167.37 166.48 165.70 164.78 162.67 162.09 161.

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Datasheet preview – MRFG35010ANT1

Datasheet Details

Part number MRFG35010ANT1
Manufacturer Freescale Semiconductor
File Size 275.91 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MRFG35010ANT1 Datasheet
Additional preview pages of the MRFG35010ANT1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.
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