Datasheet4U Logo Datasheet4U.com

MRFG35010ANT1 - RF Power Field Effect Transistor

General Description

0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.5 pF Chip Capacitor 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K pF Chip Capacitors 10 μF, 50 V Chip Capacitors 50 Ω Chip Resistor Part Number 08051J0R5BBT

Key Features

  • .796 0.797 0.796 0.796 0.796 0.796 0.794 S22 ∠φ - 179.31 179.94 179.35 178.72 178.05 177.37 176.66 175.92 175.15 174.36 173.56 172.68 171.84 171.00 170.10 169.21 168.37 167.37 166.48 165.70 164.78 162.67 162.09 161.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRFG35010MT1 RF Power Field Effect Transistor Motorola
MRFG35003M6T1 RF Power Field Effect Transistor Motorola
MRFG35003MT1 RF Power Field Effect Transistor Motorola
MRF Fast Acting Radial Lead Micro Fuse Series Bel Fuse
MRF-261 High Band VHF FM Power Transistor Eleflow

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFG35010AR1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6AT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35003MT1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.