Datasheet Summary
..
Freescale Semiconductor Technical Data
Document Number: MRFG35010AN Rev. 0, 5/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
- Typical Single
- Carrier W
- CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain
- 10 dB Efficiency
- 25% ACPR @ 5 MHz Offset
- - 43 dBc in 3.84 MHz Channel Bandwidth
- 9 Watts P1dB @ 3550 MHz, CW
- Excellent Phase Linearity and...