Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRFG35010A Rev. 1, 6/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.
- Typical Single
- Carrier W
- CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain
- 10 dB Drain Efficiency
- 25% ACPR @ 5 MHz Offset
- - 43 dBc in 3.84 MHz Channel Bandwidth
- 10 Watts P1dB @ 3550 MHz, CW
- Excellent...