Part MRFG35010AR1
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor
Category Transistor
Manufacturer Freescale Semiconductor
Size 445.79 KB
Freescale Semiconductor

MRFG35010AR1 Overview

Key Features

  • Typical Single
  • CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -10 dB Drain Efficiency