| Part number | MRFG35010AR1 |
|---|---|
| Datasheet | MRFG35010AR1_FreescaleSemiconductor.pdf |
| File Size | 445.79 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
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Freescale Semiconductor Technical Data Document Number: 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35010ANT1 | RF Power Field Effect Transistor |
| MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Power Field Effect Transistors |
| MRFG35003N6T1 | RF Power Field Effect Transistor |
| MRFG35003NT1 | RF Power Field Effect Transistors |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35020AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
