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MW5IC2030NBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MW5IC2030NBR1 datasheet PDF. This datasheet also covers the MW5IC2030GNBR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

General Description

1.8 pF High Q Chip Capacitor (0603) 1.5 pF High Q Chip Capacitor (0603) 3.9 pF High Q Chip Capacitor (0603) 6.8 pF High Q Chip Capacitor (0805) 100 pF Class 1 NPO Chip Capacitors (0805) 4.7 pF Class 1 NPO Chip Capacitor (0805) 0.1 µF X7R Chip Capacitors (1206) 0.01 µF Class 2 X7R Chip Capacitors (08

Key Features

  • MW5IC2030GNBR1 6 RF Device Data Freescale Semiconductor.

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Note: The manufacturer provides a single datasheet file (MW5IC2030GNBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 7, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.