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MW5IC970NBR1 - RF LDMOS Wideband 2-Stage Power Amplifiers

Datasheet Summary

Description

3.9 pF Chip Capacitor 56 pF Chip Capacitor 39 pF Chip Capacitors 10 µF Chip Capacitors 24 pF Chip Capacitor 15 pF Chip Capacitors 4.7 pF Chip Capacitor 0.4 pF Chip Capacitor 0.015 µF Chip Capacitors 5A Surface Mount Fuse 1A Surface Mount Fuse 681 Ω, Chip Resistors 4.75 kΩ, Chip Resistors 1.21 kΩ, Ch

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • On - Chip Current Mirror gm Reference FET for Self Biasing.

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Datasheet preview – MW5IC970NBR1

Datasheet Details

Part number MW5IC970NBR1
Manufacturer Freescale Semiconductor
File Size 241.59 KB
Description RF LDMOS Wideband 2-Stage Power Amplifiers
Datasheet download datasheet MW5IC970NBR1 Datasheet
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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. The device has a 2 - stage design with off - chip matching for the input, interstage and output networks to cover the desired frequency band.
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