| Part number | MW6IC2240GNBR1 |
|---|---|
| Datasheet | MW6IC2240GNBR1_FreescaleSemiconductor.pdf |
| File Size | 511.20 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | RF LDMOS Wideband Integrated Power Amplifiers |
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Freescale Semiconductor Technical Data Document Number: 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MW6IC2240NBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW6IC2015GNBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW6IC2015NBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW6IC2420NBR1 | RF LDMOS Integrated Power Amplifier |
| MW6S004NT1 | RF Power Field Effect Transistor |
| MW6S010GNR1 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MW6S010NR1 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
