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MW6IC2240NBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MW6IC2240NBR1 datasheet PDF. This datasheet also covers the MW6IC2240GNBR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

General Description

1.5 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 4.7 µF Chip Capacitors (1812) 8.2 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 18 kW, 1/4 W Chip Resistor (1206) 8.2 kW, 1/4 W Chip Resistor (1206) Part Number 100B1R5BW 100B1R8BW 100B6R8CW C4532X5R1H475MT 100B8R

Key Features

  • W) 51 49 47 45 43 41 39 10 12 14 16 18 20 P1dB = 47 dBm (50 W) Figure 10. Intermodulation Distortion Products versus Tone Spacing Ideal Actual VDD = 28 Vdc, IDQ1 = 110 mA IDQ2 = 370 mA, Pulsed CW 8 µsec(on), 1 msec(off) f = 2140 MHz 22 24 26 28 30 Pin, INPUT POWER (dBm) Figure 11. Pulse CW Output Power versus Input Power PAE, POWER ADDED.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW6IC2240GNBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MW6IC2240NBR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MW6IC2240NBR1. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideban...

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6 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., Full Frequency Band (2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 28 dB Power Added Efficiency — 15% IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz B

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