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MW6IC2240NBR1 - RF LDMOS Wideband Integrated Power Amplifiers

This page provides the datasheet information for the MW6IC2240NBR1, a member of the MW6IC2240GNBR1 RF LDMOS Wideband Integrated Power Amplifiers family.

Description

1.5 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 4.7 µF Chip Capacitors (1812) 8.2 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 18 kW, 1/4 W Chip Resistor (1206) 8.2 kW, 1/4 W Chip Resistor (1206) Part Number 100B1R5BW 100B1R8BW 100B6R8CW C4532X5R1H475MT 100B8R

Features

  • W) 51 49 47 45 43 41 39 10 12 14 16 18 20 P1dB = 47 dBm (50 W) Figure 10. Intermodulation Distortion Products versus Tone Spacing Ideal Actual VDD = 28 Vdc, IDQ1 = 110 mA IDQ2 = 370 mA, Pulsed CW 8 µsec(on), 1 msec(off) f = 2140 MHz 22 24 26 28 30 Pin, INPUT POWER (dBm) Figure 11. Pulse CW Output Power versus Input Power PAE, POWER ADDED.

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Datasheet preview – MW6IC2240NBR1

Datasheet Details

Part number MW6IC2240NBR1
Manufacturer Freescale Semiconductor
File Size 511.20 KB
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet download datasheet MW6IC2240NBR1 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., Full Frequency Band (2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 28 dB Power Added Efficiency — 15% IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — -46 dBc in 3.
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