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MW7IC18100NR1 Datasheet

Rf Ldmos Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

This datasheet includes multiple variants, all published together in a single manufacturer document.

MW7IC18100NR1 Overview

Freescale Semiconductor Technical Data Document Number: 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.

MW7IC18100NR1 Key Features

  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters and mon Source Scattering Parameters
  • Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
  • 270 WB
  • 14 PLASTIC MW7IC18100NR1 CASE 1621

MW7IC18100NR1 Distributor