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MWE6IC9080GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MWE6IC9080GNR1 datasheet PDF (MWE6IC9080NR1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf ldmos wideband integrated power amplifiers.

Description

6.8 pF Chip Capacitors 4.7 pF Chip Capacitors 33 pF Chip Capacitors 4.3 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors, Radial 0.1 pF Chip Capacitor 1.0 pF Chip Capacitor 4.12 KΩ, 1/4 W Chip Resistors 0.030″, εr = 2.8 Part Number ATC100B6R8CT500XT ATC100B4R7CT500X

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 VGS2 VGS1 RFin RFout/VDS2 CASE 1617-02 TO-27.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MWE6IC9080NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MWE6IC9080NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MWE6IC9080NR1 RF LDMOS Wideband Integrated Power Amplifiers
MWE6IC9100GNR1 RF LDMOS Wideband Integrated Power Amplifiers
MWE6IC9100NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MWE6IC9100NR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.DataSheet4U.com Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 29.0 28.8 28.5 PAE (%) 49.7 51.6 52.
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