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MWE6IC9080NR1 - RF LDMOS Wideband Integrated Power Amplifiers

Description

6.8 pF Chip Capacitors 4.7 pF Chip Capacitors 33 pF Chip Capacitors 4.3 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors, Radial 0.1 pF Chip Capacitor 1.0 pF Chip Capacitor 4.12 KΩ, 1/4 W Chip Resistors 0.030″, εr = 2.8 Part Number ATC100B6R8CT500XT ATC100B4R7CT500X

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 VGS2 VGS1 RFin RFout/VDS2 CASE 1617-02 TO-27.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MWE6IC9080N www.DataSheet4U.com Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 29.0 28.8 28.5 PAE (%) 49.7 51.6 52.
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