MWE6IC9080NR1 Overview
Freescale Semiconductor Technical Data Document Number: MWE6IC9080N .. Rev. 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA,...
MWE6IC9080NR1 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source Scattering Parameters
- On--Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel