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AO4588 - 30V N-Channel MOSFET

Description

The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).

This device is ideal for load switch and battery protection applications.

Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 20A < 4.8mΩ < 6.2mΩ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B C TA=70° Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junctio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4588 30V N-Channel MOSFET General Description The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 20A < 4.8mΩ < 6.2mΩ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
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