2SK1984-01MR - N-channel MOS-FET

Datasheet Summary

Features

High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 4Ω 3A 40W > Outline Drawing >.

Fuji Electric

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Datasheet Details

Part number	2SK1984-01MR
Manufacturer	Fuji Electric
File Size	190.69 KB
Description	N-channel MOS-FET
Datasheet	2SK1984-01MR Datasheet
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2SK1984-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 4Ω 3A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.

Published: Mar 30, 2005 |