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2SK1984-01M - N-Channel MOSFET Transistor

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Description

Drain Current ID= 3A@ TC=25℃ Drain Source Voltage- : VDSS=900V(Min) Fast Switching Speed APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 90

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Datasheet Details

Part number 2SK1984-01M
Manufacturer Inchange Semiconductor
File Size 48.33 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1984-01M DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 3.125 ℃/W Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.
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