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2SK1986-01 - N-channel MOS-FET

Datasheet Summary

Features

  • High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing >.

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Datasheet Details

Part number 2SK1986-01
Manufacturer Fuji Electric
File Size 214.75 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK1986-01 Datasheet
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2SK1986-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 1000V 3,6Ω 4A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.
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