2SK2516-01S Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 13mΩ 50A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 50 200 ±16 80 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=25A VGS=4V ID=25A VGS=10V ID=25A VDS=12V VDS=25V VGS=0V f=1MHz VCC=12V ID=50A VGS=10V RGS=10Ω Tch=25°C L=100µH IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 30 1,0 Typ. 1,5 10 0,2 10 16 10 35 3500 1650 830 15 65 190 140 1,25 60 Max. 2,0 500 1,0 100 22 13 5250 2480 1250 25 100 290 210 1,80 Unit V V µA m A n A mΩ mΩ S p F p F p F ns ns ns ns A V ns µC Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 1,56 Unit °C/W 125 °C/W N-channel MOS-FET 30V 13µΩ 2SK2516-01L,S FAP-III Series Drain-Source...