2SK2519-01 Datasheet | Fuji Electric

Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 200V 0,4Ω 10A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 200 200 10 40 ±30 40 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=200V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=10A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2x IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 200 2,5 Typ. 3,0 10 0,2 10 0,35 4,5 500 110 50 10 30 30 20 1,15 130 750 Max. 3,5 500 1,0 100 0,4 750 170 80 20 50 50 30 1,8 2,0 Unit V V µA m A n A Ω S p F p F p F ns ns ns ns A V ns n C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75,0 3,125 Unit °C/W °C/W N-channel MOS-FET 200V 0,4Ω FAP-II Series Drain-Sou...