Datasheet4U Logo Datasheet4U.com

2SK2690-01 - N-channel MOS-FET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2690-01 FAP-IIIB Series FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy Maximum power dissipation Operating and storage Temperature range Symbol VDS ID ID p VGS EAV *1 PD Tch Tstg Ratings 60 ±80 ±320 ±20 599 125 +150 -55 to +150 Unit V A A V mJ W °C °C *1 L=0.