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2SK2690-01 - N-channel MOS-FET

Datasheet Summary

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power.

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Datasheet Details

Part number 2SK2690-01
Manufacturer Fuji Electric
File Size 222.27 KB
Description N-channel MOS-FET
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Full PDF Text Transcription

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2SK2690-01 FAP-IIIB Series FUJI POWER MOSFET 200511 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy Maximum power dissipation Operating and storage Temperature range Symbol VDS ID ID p VGS EAV *1 PD Tch Tstg Ratings 60 ±80 ±320 ±20 599 125 +150 -55 to +150 Unit V A A V mJ W °C °C *1 L=0.
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