Datasheet4U Logo Datasheet4U.com

2SK2691-01R - N-channel MOS-FET

Datasheet Summary

Features

  • High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof.

📥 Download Datasheet

Datasheet preview – 2SK2691-01R

Datasheet Details

Part number 2SK2691-01R
Manufacturer Fuji Electric
File Size 274.00 KB
Description N-channel MOS-FET
Datasheet download datasheet 2SK2691-01R Datasheet
Additional preview pages of the 2SK2691-01R datasheet.

📁 Similar Datasheet

  • 2SK2698 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2699 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2699 - N-Channel 600V MOSFET (VBsemi)
  • 2SK260 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK2601 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2601 - N-Channel MOSFET (INCHANGE)
  • 2SK2602 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2603 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2604 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK2605 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
Other Datasheets by Fuji Electric

Full PDF Text Transcription

Click to expand full text
2SK2691-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Outline Drawings TO-3PF Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol VDS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 Unit V Remarks ±70 A ±280 A ±20 V 685 mJ *1 100 W +150 -55 to +150 °C °C *1 L=0.
Published: |