2SK2872-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
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Related Datasheets
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4AM11 — Hitachi Semiconductor — Silicon N-Channel/P-Channel Power MOS FET Array
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