4AM11 - Silicon N-Channel/P-Channel Power MOS FET Array

Datasheet Summary

Features

Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS =.
10 V, ID =.
2.5 A.
Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 4AM11 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reve.

Hitachi Semiconductor

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Datasheet Details

Part number	4AM11
Manufacturer	Hitachi Semiconductor
File Size	125.20 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Datasheet	4AM11 Datasheet
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4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 4AM11 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.

Published: Apr 1, 2005 |