4AM11 Description
4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching.
4AM11 Key Features
- Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = -10 V, ID = -2.5
- Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driv