4AM11 Overview
Silicon N-Channel/P-Channel Power MOS FET Array Application
4AM11 Key Features
- Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = -10 V, ID = -2.5
Datasheet Details
| Part number | 4AM11 |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 125.20 KB |
| Description | Silicon N-Channel/P-Channel Power MOS FET Array |
| Datasheet | 4AM11_HitachiSemiconductor.pdf |
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