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4AM11 - Silicon N-Channel/P-Channel Power MOS FET Array

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Hitachi Semiconductor

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4AM11 Silicon N-Channel/P-Channel Power MOS FET Array by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – 4AM11

Datasheet Details

Part number	4AM11
Manufacturer	Hitachi Semiconductor
File Size	125.20 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Datasheet	4AM11 Datasheet
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Features

Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS =.
10 V, ID =.
2.5 A.
Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 4AM11 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reve.

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Published: Apr 1, 2005 |