• Part: 4AM11
  • Description: Silicon N-Channel/P-Channel Power MOS FET Array
  • Manufacturer: Hitachi Semiconductor
  • Size: 125.20 KB
Download 4AM11 Datasheet PDF
Hitachi Semiconductor
4AM11
4AM11 is Silicon N-Channel/P-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features - Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = - 10 V, ID = - 2.5 A - - - - - Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor...