4AM15 Description
4AM15 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching.
4AM15 Key Features
- Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS = -10 V, ID = -2 A
- Low drive current High speed switching High density mounting Suitable for H-bridged motor driver