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4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS = –10 V, ID = –2 A • • • • Low drive current High speed switching High density mounting Suitable for H-bridged motor driver
Outline
www.DataSheet.in
4AM15
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)*1 IDR Nch 200 ±20 4 16 4 Pch –200 ±20 –4 –16 –4 Unit V V A A A W W °C °C
Pch (Tc = 25°C)*2 32 Pch*2 4.0 150 –55 to +150
Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
4AM15 Datasheet
