4AM17
4AM17 is Silicon N/P-Channel/P-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-729 (Z) 1st. Edition February 1999 Features
- Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS =
- 10 V, ID =
- 4 A
- 4 V gate drive devices.
- High density mounting
Outline
SP-12
12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D
910 1112
S 3
S 6
S 7
S 10
1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
.DataSheet.in...
