4AM17 Overview
Key Features
- Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
- 4 V gate drive devices
- Gate 2, 4, 9
- Drain 3, 6, 7
- Source 4AM17
| Part | 4AM17 |
|---|---|
| Description | Silicon N/P-Channel/P-Channel Power MOS FET Array |
| Manufacturer | Hitachi Semiconductor |
| Size | 62.53 KB |
Pricing from 15.64 USD, available from Rochester Electronics and Verical.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 38812 | 25+ : 15.64 USD 100+ : 14.86 USD 500+ : 14.08 USD 1000+ : 13.29 USD |
View Offer |
| Verical | 35212 | 25+ : 19.55 USD 100+ : 18.575 USD 500+ : 17.6 USD 1000+ : 16.6125 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| CTA2P1N | Diodes Incorporated | COMPLEX TRANSISTOR ARRAY |
| CTA2N1P | Diodes Incorporated | COMPLEX TRANSISTOR ARRAY |
| 7003 | Allegro MicroSystems | HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAY |