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4AM17
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-729 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devices. • High density mounting
Outline
SP-12
12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D
34
56
78
910 1112
S 3
S 6
S 7
S 10
1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
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4AM17
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
4AM17 Datasheet
