4AM13 Description
4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching.
4AM13 Key Features
- Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = -10 V, ID = -1.5
- Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driv