• Part: 4AM13
  • Description: Silicon N-Channel/P-Channel Power MOS FET Array
  • Manufacturer: Hitachi Semiconductor
  • Size: 144.85 KB
Download 4AM13 Datasheet PDF
Hitachi Semiconductor
4AM13
4AM13 is Silicon N-Channel/P-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features - Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = - 10 V, ID = - 1.5 A - - - - - Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver .DataSheet.in Outline...