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4AM13 - Silicon N-Channel/P-Channel Power MOS FET Array

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Hitachi Semiconductor

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4AM13 Silicon N-Channel/P-Channel Power MOS FET Array by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – 4AM13

Datasheet Details

Part number	4AM13
Manufacturer	Hitachi Semiconductor
File Size	144.85 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Datasheet	4AM13 Datasheet
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Features

Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS =.
10 V, ID =.
1.5 A.
Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver www. DataSheet. in 4AM13 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body t.

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Published: Nov 12, 2010 |