4AM13 Datasheet (Hitachi Semiconductor)

Part 4AM13
Description Silicon N-Channel/P-Channel Power MOS FET Array
Manufacturer Hitachi Semiconductor
Size 144.85 KB
Pricing from 18.428 USD, available from SiTime Direct and DigiKey.
Hitachi Semiconductor

4AM13 Overview

Key Specifications

Max Voltage (typical range): 3.63 V
Min Voltage (typical range): 2.97 V
Height: 800 µm
Max Operating Temp: 125 °C

Key Features

  • Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A
  • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 4AM13 Outline

Price & Availability

Seller Inventory Price Breaks Buy
SiTime Direct 9385 1+ : 18.428 USD
100+ : 14.333 USD
500+ : 9.669 USD
1000+ : 5.915 USD
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DigiKey 0 1+ : 7.84 USD
10+ : 6.814 USD
25+ : 6.4436 USD
50+ : 6.1776 USD
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