4AM16 Description
4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching.
4AM16 Key Features
- Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = -10 V, I D = -4 A
- High speed switching
- High density mounting
- Suitable for H-brided motor driver