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4AM16

Manufacturer: Hitachi Semiconductor (now Renesas)

4AM16 datasheet by Hitachi Semiconductor (now Renesas).

4AM16 datasheet preview

4AM16 Datasheet Details

Part number	4AM16
Datasheet	4AM16_HitachiSemiconductor.pdf
File Size	113.12 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Silicon N-Channel/P-Channel Power MOS FET Array

4AM16 Overview

4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching.

4AM16 Key Features

Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = -10 V, I D = -4 A
High speed switching
High density mounting
Suitable for H-brided motor driver

More Datasheets from Hitachi Semiconductor (now Renesas)

View all Hitachi Semiconductor (now Renesas) datasheets

Part Number	Description
4AM11	Silicon N-Channel/P-Channel Power MOS FET Array
4AM13	Silicon N-Channel/P-Channel Power MOS FET Array
4AM15	Silicon N-Channel/P-Channel Power MOS FET Array
4AM17	Silicon N/P-Channel/P-Channel Power MOS FET Array

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