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4AM16 Datasheet Silicon N-channel/p-channel Power Mos Fet Array

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power.

Key Features

  • Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =.
  • 10 V, I D =.
  • 4 A.
  • High speed switching.
  • High density mounting.
  • Suitable for H-brided motor driver Outline www. DataSheet. in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
4AM11 Silicon N-Channel/P-Channel Power MOS FET Array
4AM13 Silicon N-Channel/P-Channel Power MOS FET Array
4AM15 Silicon N-Channel/P-Channel Power MOS FET Array
4AM17 Silicon N/P-Channel/P-Channel Power MOS FET Array

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