4AM16 - Silicon N-Channel/P-Channel Power MOS FET Array

Datasheet Summary

Features

Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS =.
10 V, I D =.
4 A.
High speed switching.
High density mounting.
Suitable for H-brided motor driver Outline www. DataSheet. in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID.

Hitachi Semiconductor

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Datasheet Details

Part number	4AM16
Manufacturer	Hitachi Semiconductor
File Size	113.12 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Datasheet	4AM16 Datasheet
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4AM16 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A • High speed switching • High density mounting • Suitable for H-brided motor driver Outline www.DataSheet.in 4AM16 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Device Operation Tch Tstg 2 2 1 Nch 60 ±20 8 32 8 28 4.

Published: Nov 12, 2010 |