• Part: 4AM16
  • Description: Silicon N-Channel/P-Channel Power MOS FET Array
  • Manufacturer: Hitachi Semiconductor
  • Size: 113.12 KB
Download 4AM16 Datasheet PDF
Hitachi Semiconductor
4AM16
4AM16 is Silicon N-Channel/P-Channel Power MOS FET Array manufactured by Hitachi Semiconductor.
Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features - Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = - 10 V, I D = - 4 A - High speed switching - High density mounting - Suitable for H-brided motor driver Outline .DataSheet.in...