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2SK3523-01R - N-Channel MOSFET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-.

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2SK3523-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3PF Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 500 V Continuous drain current VDSX *5 ID 500 V ±25 A Equivalent circuit schematic Pulsed drain current ID(puls] ±100 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 25 A Drain(D) Maximum Avalanche Energy EAS *1 336.