Datasheet4U Logo Datasheet4U.com

2SK3527-01 - N-Channel MOSFET

Datasheet Summary

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof.

📥 Download Datasheet

Datasheet preview – 2SK3527-01

Datasheet Details

Part number 2SK3527-01
Manufacturer Fuji Electric
File Size 109.76 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3527-01 Datasheet
Additional preview pages of the 2SK3527-01 datasheet.

📁 Similar Datasheet

  • 2SK3527 - N-Channel MOSFET (INCHANGE)
  • 2SK3520-01MR - N-CHANNEL SILICON POWER MOSFET (Fuji)
  • 2SK3528-01R - N-Channel Silicon Power MOSFET (Fuji)
  • 2SK3528-01R - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3529-01 - N-CHANNEL SILICON POWER MOSFET (Fuji)
  • 2SK3529-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK350 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK350 - Silicon N-Channel MOSFET (Hitachi)
  • 2SK3501 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3503 - N-Channel MOSFET (Kexin)
Other Datasheets by Fuji Electric

Full PDF Text Transcription

Click to expand full text
2SK3527-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 600 600 ±17 ±68 ±30 17 412 20 5 2.
Published: |