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2SK3588-01S - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3588-01S datasheet PDF. This datasheet also covers the 2SK3588-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

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Note: The manufacturer provides a single datasheet file (2SK3588-01L-FujiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for 2SK3588-01S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3588-01S. For precise diagrams, and layout, please refer to the original PDF.

2SK3588-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SI...

View more extracted text
e No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings Applications Switching regulators P4 UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 100 V VDSX *5 70 V Continuous drain current ID ±50 A Pulsed drain current ID(puls] ±200 A Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 50 A Maximum Avalanche Energy EAS *1 465 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 k

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