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2SK3588-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET Outline Drawings
Applications
Switching regulators
P4
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100
V
VDSX *5
70
V
Continuous drain current
ID
±50
A
Pulsed drain current
ID(puls]
±200
A
Gate-source voltage
VGS
±30
V
Non-repetitive Avalanche current IAS *2
50
A
Maximum Avalanche Energy
EAS *1
465
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5
kV/µs
Max.
2SK3588-01SJ Datasheet
