• Part: 2SK3592-01L
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 281.46 KB
Download 2SK3592-01L Datasheet PDF
Fuji Electric
2SK3592-01L
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 150 V 120 A Continuous drain current ±57 A Pulsed drain current ±228 V Gate-source voltage ±30 A Non-repetitive Avalanche current 57 m J Maximum Avalanche Energy 272.5 k V/µs Maximum Drain-Source d V/dt 20 Peak Diode Recovery d V/dt 5 k V/µs Max. power dissipation 1.67 W 270 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C - 1 L=123µH, Vcc=48V, See to Avalanche Energy Graph - 2 Tch < =150°C - 3 IF< - 4 VDS < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 150V - 5 VGS=-30V Item Drain-source voltage Symbol V DS VDSX - 5 ID ID(puls] VGS IAS - 2 EAS - 1 d VDS/dt - 4 d V/dt - 3 PD Ta=25°C Tc=25°C Equivalent circuit...