2SK3592-01S
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
See to P4
Maximum ratings and characteristic Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 150 V 120 A Continuous drain current ±57 A Pulsed drain current ±228 V Gate-source voltage ±30 A Non-repetitive Avalanche current 57 m J Maximum Avalanche Energy 272.5 k V/µs Maximum Drain-Source d V/dt 20 Peak Diode Recovery d V/dt 5 k V/µs Max. power dissipation 1.67 W 270 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C
- 1 L=123µH, Vcc=48V, See to Avalanche Energy Graph
- 2 Tch < =150°C
- 3 IF<
- 4 VDS < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 150V
- 5 VGS=-30V Item Drain-source voltage Symbol V DS VDSX
- 5 ID ID(puls] VGS IAS
- 2 EAS
- 1 d VDS/dt
- 4 d V/dt
- 3 PD Ta=25°C Tc=25°C
Equivalent circuit...